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INFINEON FF200R17KE3HOSA1 IGBT Array & Module Transistor, N Channel, 310 A, 2 V, 1.25 kW, 1.7 kV, Module Pro Co Sound SMM-10 Let the way you organize

SKU 77154011897
4.1
USD7844.91 USD7891.91

Pay in 4 interest-free payments of $1961.23 Learn more

Shipping Estimate
USA
  • USA
  • CAN

Ships within 48 hours · Estimated delivery Aug 11 - Aug 16

Description

Let the way you organize and transport gear positively reflect upon your professionalism

Adheres to Most Smooth Surfaces

Designed for studio

This tightens the bass response and makes the overall playback even more relaxed and transparent

5 dBv (adjustable via rear-panel dip-switches) Ducking Depth: 15 dB Tone Control (Treble / Bass) ±12 dB @ 100 Hz & 10 kHz Phantom Power Switch selectable

INFINEON FF200R17KE3HOSA1 IGBT Array & Module Transistor, N Channel, 310 A, 2 V, 1.25 kW, 1.7 kV, Module Pro Co Sound SMM-10 Let the way you organizeThis is a IGBT Array & Module Transistor, N Channel, 310 A, 2 V, 1. 25 kW, 1. 7 kV, Module product from INFINEON with the model number FF200R17KE3HOSA1Product details Transistor Case Style Module Transistor Polarity N Channel Power Dissipation Pd 1. 25kW DC Collector Current 310A Collector Emitter Voltage V(br)ceo 1. 7kV Product Range 62mm C Series Operating Temperature Max 125C No. of Pins Collector Emitter Saturation Voltage Vce(on) 2V Other details

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
  • Please click here for more details>>> Return & Exchange Policy

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